v rrm = 600 v - 1200 v i f =150 a features ? high surge capability do-8 package ? not esd sensitive note: 1. standard polarity: stud is cathode. 3. stud is base. parameter symbol S150J (r) s150k (r) unit repetitive peak reverse voltage v rrm 600 800 v rms reverse voltage v rms 420 560 v dc blocking voltage v dc 600 800 v 2. reverse polarity (r): stud is anode. S150J thru s150qr s150q (r) 1000 700 s150m (r) maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) ? types from 600 v to 1200 v v rrm silicon standard recover y diode conditions 1200 840 1200 1000 dc blocking voltage v dc 600 800 v continuous forward current i f 150 150 a operating temperature t j -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 c parameter symbol S150J (r) s150k (r) unit diode forward voltage 1.2 1.2 10 10 a 15 15 ma thermal characteristics thermal resistance, junction - case r thjc 0.35 0.35 c/w 150 15 a 3140 reverse current i r v f 3140 v electrical characteristics, at tj = 25 c, unless otherwise specified v r = 600 v, t j = 25 c i f = 150 a, t j = 25 c t c 180 c conditions 3140 3140 -55 to 150 150 -55 to 150 s150q (r) 10 10 s150m (r) 0.35 v r = 600 v, t j = 150 c 0.35 1.2 1.2 9 -55 to 150 -55 to 150 t c = 25 c, t p = 8.3 ms 1200 1000 surge non-repetitive forward current, half sine wave i f,sm www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 1
S150J thru s150qr www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. S150J thru s150qr do-8 (do-205aa) g d h i f b inches millimeters min max min max a 3/8-24 unf b ----- 0.930 ----- 23.5 c 1.050 1.060 26.67 26.92 d 4.300 4.700 109.22 119.38 e ----- 0.690 ----- 17.00 f 0.260 ----- 6.50 ----- g ----- 0.940 ----- 24.00 h ----- 0.600 ----- 15.23 i 0.276 0.286 7.010 7.260 a e c www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 3
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